Annealing effects on the interfacial properties of GaN MOS prepared by photo-enhanced wet oxidation

Author

Wu, H.-M. ; Lin, J.-Y. ; Peng, L.-H. ; Lee, C.-M. ; Chyi, J.-I. ; Chen, E.

Author_Institution

Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan

fYear

2003

fDate

10-12 Dec. 2003

Firstpage

406

Lastpage

407

Abstract

The authors investigate the annealing effects on the interfacial properties of gallium oxide (Ga₂O₃) grown on gallium nitride (GaN) by the photo-enhanced wet oxidation technique. The depth profile resolved XPS analysis indicates an interfacial layer as thin as 20nm can be maintained at the Ga₂O₃/GaN interface when subject to a rapid thermal annealing in an oxygen ambient at 800°C. The authors I-V and C-V analysis on the MOS device reveals a low interfacial density of state ∼5×10¹⁰ cm^-2eV^-1 and high breakdown field above 3MV/cm. These results suggest the photo-grown Ga₂O₃ with post O₂ annealing is suitable for power device application.

Keywords

III-V semiconductors; MIS devices; X-ray photoelectron spectra; gallium compounds; oxidation; rapid thermal annealing; semiconductor device breakdown; wide band gap semiconductors; 20 nm; 800 degC; Ga₂O₃-GaN; Ga₂O₃/GaN interface; MOS device; XPS analysis; gallium nitride; gallium oxide; interfacial layer; photo enhanced wet oxidation; rapid thermal annealing; Capacitance-voltage characteristics; Current measurement; Density measurement; Electric breakdown; Gallium nitride; III-V semiconductor materials; Leakage current; MOS devices; Oxidation; Rapid thermal annealing;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium, 2003 International

Print_ISBN

0-7803-8139-4

Type

conf

DOI

10.1109/ISDRS.2003.1272156

Filename

1272156