Title :
Annealing effects on the interfacial properties of GaN MOS prepared by photo-enhanced wet oxidation
Author :
Wu, H.-M. ; Lin, J.-Y. ; Peng, L.-H. ; Lee, C.-M. ; Chyi, J.-I. ; Chen, E.
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Abstract :
The authors investigate the annealing effects on the interfacial properties of gallium oxide (Ga2O3) grown on gallium nitride (GaN) by the photo-enhanced wet oxidation technique. The depth profile resolved XPS analysis indicates an interfacial layer as thin as 20nm can be maintained at the Ga2O3/GaN interface when subject to a rapid thermal annealing in an oxygen ambient at 800°C. The authors I-V and C-V analysis on the MOS device reveals a low interfacial density of state ∼5×1010 cm-2eV-1 and high breakdown field above 3MV/cm. These results suggest the photo-grown Ga2O3 with post O2 annealing is suitable for power device application.
Keywords :
III-V semiconductors; MIS devices; X-ray photoelectron spectra; gallium compounds; oxidation; rapid thermal annealing; semiconductor device breakdown; wide band gap semiconductors; 20 nm; 800 degC; Ga2O3-GaN; Ga2O3/GaN interface; MOS device; XPS analysis; gallium nitride; gallium oxide; interfacial layer; photo enhanced wet oxidation; rapid thermal annealing; Capacitance-voltage characteristics; Current measurement; Density measurement; Electric breakdown; Gallium nitride; III-V semiconductor materials; Leakage current; MOS devices; Oxidation; Rapid thermal annealing;
Conference_Titel :
Semiconductor Device Research Symposium, 2003 International
Print_ISBN :
0-7803-8139-4
DOI :
10.1109/ISDRS.2003.1272156
