DocumentCode :
2617967
Title :
Electronic transport in carbon nanotube field-effect transistors
Author :
Appenzeller, J.
fYear :
2003
fDate :
10-12 Dec. 2003
Firstpage :
410
Lastpage :
411
Abstract :
In this paper, we study about the electronic transport in carbon nanotube field-effect transistors. Intrinsic properties like electron mobility, band structure and interconnections of semiconducting carbon nanotubes are compared with other semiconductors.
Keywords :
carbon nanotubes; electron mobility; field effect transistors; interconnections; nanotube devices; C; band structure; carbon nanotube field-effect transistors; electron mobility; electronic transport; interconnections; intrinsic properties; semiconducting carbon nanotubes; CMOS technology; CNTFETs; Carbon nanotubes; Chemical technology; Electron tubes; FETs; Nanoscale devices; Scattering; Semiconductivity; Wire;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Device Research Symposium, 2003 International
Print_ISBN :
0-7803-8139-4
Type :
conf
DOI :
10.1109/ISDRS.2003.1272157
Filename :
1272157
Link To Document :
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