Title :
Electron mobility of a semiconducting carbon nanotube
Author :
Pennington, Gary ; Akturk, Akin ; Goldsman, Neil
Author_Institution :
Dept. of Electr. & Comput. Eng., Maryland Univ., College Park, MD, USA
Abstract :
This paper presents a model which predicts the mobility of zig-zag (n, m = 0) single-walled nanotubes (SWNTs) for tubes indices in the range of 10 ≤ n ≤ 58. These are small diameter tubes with a corresponding diameter range of 0.8 nm ≤ d ≤ 4.6 nm. The analytical model is fit to the results of Monte Carlo simulations, and low-field mobility values on the order of those found in experiments are obtained.
Keywords :
Monte Carlo methods; carbon nanotubes; electron mobility; semiconductor materials; 0.8 to 4.6 nm; Monte Carlo simulations; SWNT; electron mobility; low field mobility; semiconducting carbon nanotube; single walled nanotubes; Carbon nanotubes; Educational institutions; Electron mobility; FETs; Material properties; Monte Carlo methods; Photonic band gap; Predictive models; Scattering; Semiconductivity;
Conference_Titel :
Semiconductor Device Research Symposium, 2003 International
Print_ISBN :
0-7803-8139-4
DOI :
10.1109/ISDRS.2003.1272158
