Title :
Fabrication and characterization of precisely graded parabolic quantum wells using monolayer deposition
Author :
Kane, B.E. ; Facer, G.R. ; Clark, R.G. ; Pfeiffer, L.N. ; West, K.W. ; Boebinger, G.S.
Author_Institution :
Semicond. Nanofabrication Facility, New South Wales Univ., Sydney, NSW, Australia
Abstract :
We describe the fabrication and low-temperature characterization of high quality parabolic quantum wells, grown with GaAs/AlxGa1-xAs molecular beam epitaxy using the novel method of depositing single monolayers of either GaAs or Alx Ga1-xAs so as to produce an average parabolic potential. The high quality of these wells is attested to by the appearance of magnetoresistance oscillations associated with the population of the second subband, observable at low temperatures when the well is oriented nearly parallel to the magnetic field, a phenomenon not previously observed in parabolic quantum wells
Keywords :
III-V semiconductors; Shubnikov-de Haas effect; aluminium compounds; electron gas; gallium arsenide; interface states; magnetoresistance; molecular beam epitaxial growth; monolayers; semiconductor growth; semiconductor quantum wells; GaAs-AlGaAs; GaAs/AlxGa1-xAs molecular beam epitaxy; Shubnikov de Haas oscillations; average parabolic potential; fabrication; high quality; high quality parabolic quantum wells; low-temperature characterization; magnetic field; magnetoresistance oscillations; monolayer deposition; precisely graded parabolic quantum wells; second subband; three dimensional electron gas; Artificial intelligence; Australia; Electrons; Fabrication; Gallium arsenide; Magnetic confinement; Magnetic fields; Magnetoresistance; Nanofabrication; Potential well;
Conference_Titel :
Optoelectronic and Microelectronic Materials And Devices Proceedings, 1996 Conference on
Conference_Location :
Canberra, ACT
Print_ISBN :
0-7803-3374-8
DOI :
10.1109/COMMAD.1996.610100
