Characterization of MOSFETs on very thin SOI at temperatures from 77 K to 350 K

Summary form only given. Measurements show significant improvement in subthreshold characteristics, drain induced barrier lowering (DIBL), and effective channel mobility at liquid nitrogen temperature. The devices measured have a channel doping of 3×10¹⁶ cm^-2, and the gate is n⁺-polysilicon on a 120-Å gate oxide. The 1300-Å silicon film is thin enough to be fully depleted under operating conditions with no substrate bias, thus avoiding the kink effect. The subthreshold characteristics of these devices also show improvement at low temperatures. The subthreshold slope S improves by a factor of about four at liquid nitrogen temperature compared to room temperature. This is expected for a longer-channel device. The low-temperature DIBL shows improvement over that at room temperature. This can be understood by recognizing that in the subthreshold regime electron-drift current depends only on the potential barrier to electrons at the virtual cathode. At low temperatures this barrier will be lower for a given current level, since injection current over a potential barrier is proportional to e^qφkT/. Therefore, the horizontal electric field from the junction will be smaller along the channel, and a smaller DIBL effect is expected from increased drain bias at lower temperature as observed