DocumentCode :
2618343
Title :
Fundamental electronic properties of metal-organic contacts and organic-organic heterojunctions
Author :
Kahn, A.
Author_Institution :
Dept. of Electr. Eng., Princeton Univ., NJ, USA
fYear :
2003
fDate :
10-12 Dec. 2003
Firstpage :
444
Lastpage :
445
Abstract :
The electronic transport and optoelectronic properties of crystalline and amorphous phases of π-conjugated organic molecular films have been extensively investigated over the past decade. This paper reviews about the formation of metal-organic (MO) interface barriers and their dependence on the (work function of the) metal. The work spans many π-conjugated molecular materials with different molecular configurations and with energy gaps ranging from 1.5 to more than 4.5 eV. Differences between organic-on-metal and metal-on-organic interfaces are also discussed. Electrically doping the molecular film leads to the formation of a narrow depletion region that allows tunneling of electron from the injecting contacts. this effective reduction in barrier leads to an injection current enhancement by up to 7 orders of magnitude.
Keywords :
energy gap; gold; interface states; organic semiconductors; semiconductor doping; semiconductor heterojunctions; semiconductor thin films; tunnelling; π-conjugated molecular films; Au; doping; electron tunneling; electronic transport; energy gaps; injecting contacts; metal-organic contacts; metal-organic interface barriers; molecular configurations; optoelectronic properties; organic-organic heterojunctions; Charge carrier processes; Doping; Flat panel displays; Heterojunctions; Large-scale systems; Organic light emitting diodes; Organic materials; Substrates; Vacuum breakdown; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Device Research Symposium, 2003 International
Print_ISBN :
0-7803-8139-4
Type :
conf
DOI :
10.1109/ISDRS.2003.1272176
Filename :
1272176
Link To Document :
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