Title :
Nanoscale FinFETs for low power applications
Author :
Rösner, W. ; Landgraf, E. ; Kretz, J. ; Dreeskornfeld, L. ; Schäfer, H. ; Stadele, M. ; Schulz, T. ; Hofmann, F. ; Luyken, R.J. ; Specht, M. ; Hartwich, J. ; Pamler, W. ; Risch, L.
Author_Institution :
Infineon Technol., Munich, Germany
Abstract :
FinFETs were the most favourable double gate transistor for the future CMOS device demands due to their improved turn off behaviour caused by better electrostatic channel control, suits especially for battery powered hand held applications. The device was fabricated with an Eltran SOI wafers. Its transfer characteristics reveals its suitability for its application in low power applications.
Keywords :
CMOS integrated circuits; MOSFET; nanoelectronics; silicon-on-insulator; wafer bonding; CMOS device; Eltran SOI wafers; battery powered hand held applications; electrostatic channel control; low power applications; nanoscale FinFET; Batteries; Boron; CMOS technology; Dielectrics; Doping; Electrostatics; Epitaxial growth; Etching; FinFETs; Lithography;
Conference_Titel :
Semiconductor Device Research Symposium, 2003 International
Print_ISBN :
0-7803-8139-4
DOI :
10.1109/ISDRS.2003.1272182
