DocumentCode
2618449
Title
Nanoscale FinFETs for low power applications
Author
Rösner, W. ; Landgraf, E. ; Kretz, J. ; Dreeskornfeld, L. ; Schäfer, H. ; Stadele, M. ; Schulz, T. ; Hofmann, F. ; Luyken, R.J. ; Specht, M. ; Hartwich, J. ; Pamler, W. ; Risch, L.
Author_Institution
Infineon Technol., Munich, Germany
fYear
2003
fDate
10-12 Dec. 2003
Firstpage
452
Lastpage
453
Abstract
FinFETs were the most favourable double gate transistor for the future CMOS device demands due to their improved turn off behaviour caused by better electrostatic channel control, suits especially for battery powered hand held applications. The device was fabricated with an Eltran SOI wafers. Its transfer characteristics reveals its suitability for its application in low power applications.
Keywords
CMOS integrated circuits; MOSFET; nanoelectronics; silicon-on-insulator; wafer bonding; CMOS device; Eltran SOI wafers; battery powered hand held applications; electrostatic channel control; low power applications; nanoscale FinFET; Batteries; Boron; CMOS technology; Dielectrics; Doping; Electrostatics; Epitaxial growth; Etching; FinFETs; Lithography;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Device Research Symposium, 2003 International
Print_ISBN
0-7803-8139-4
Type
conf
DOI
10.1109/ISDRS.2003.1272182
Filename
1272182
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