Optical properties of δ-doped GaAs nipi super-lattices

Author

Johnston, M.B. ; Gal, M. ; Li, G. ; Jagadish, C.

Author_Institution

New South Wales Univ., Sydney, NSW, Australia

fYear

1996

fDate

8-11 Dec 1996

Firstpage

179

Lastpage

182

Abstract

A δ-doped GaAs nipi super-lattice has been examined using photoluminescence spectroscopy. Intensity dependent photoluminescence spectra were measured over 5 orders of magnitude (1 kW/cm²-8 mW/cm²). A significant shift in the photoluminescence emission maxima (155 meV) was evident over this range. Time resolved photoluminescence spectra were observable over 6 temporal orders of magnitude (10 ns-10 ms). The strong photoluminescence signal over such a long decay time allowed the relaxation of the nipi effective bandgap after optical excitation to be observed

Keywords

III-V semiconductors; energy gap; gallium arsenide; photoluminescence; semiconductor superlattices; time resolved spectra; δ-doped GaAs nipi super-lattices; 10 ns to 10 ms; GaAs; intensity dependent photoluminescence spectra; long decay time; nipi effective bandgap relaxation; optical excitation; optical properties; photoluminescence emission maxima; photoluminescence spectroscopy; strong photoluminescence signal; time resolved photoluminescence spectra; Doping profiles; Epitaxial growth; Gallium arsenide; Optical pulses; Optical superlattices; Photoluminescence; Photonic band gap; Semiconductor device doping; Semiconductor superlattices; Spectroscopy;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials And Devices Proceedings, 1996 Conference on

Conference_Location

Canberra, ACT

Print_ISBN

0-7803-3374-8

Type

conf

DOI

10.1109/COMMAD.1996.610101

Filename

610101