Title :
Microwave heating for advanced semiconductor processing
Author_Institution :
Wisconsin Univ., Madison, WI, USA
Abstract :
The microwave power is successfully utilized to rapidly heat a variety of materials, including Si at 150 °C/s to 1200 °C and SiC at 400 °C/s to 2000 °C. In this paper with Si microwave RTP, we have demonstrated ultra shallow junctions that exceed lamp-based RTP capabilities and satisfy the 90 nm technology node. The comparative experiment has been conducted between microwave RTP and optical lamp RTP. Comparison sheet resistance-junction depth curve for microwave and lamp-based p-type annealing results and time-temperature profile for a high-power microwave spike annealing are studied by experiments.
Keywords :
elemental semiconductors; microwave heating; rapid thermal annealing; semiconductor technology; silicon; silicon compounds; wide band gap semiconductors; 150 to 1200 degC; 400 to 2000 degC; Si; SiC; junction depth curve; lamp based RTP; microwave heating; microwave power; rapid thermal processing; semiconductor processing; sheet resistance; ultra shallow junctions; Atom optics; Chemicals; Electromagnetic heating; Fabrication; Implants; Lamps; Lighting; Optical films; Rapid thermal annealing; Rapid thermal processing;
Conference_Titel :
Semiconductor Device Research Symposium, 2003 International
Print_ISBN :
0-7803-8139-4
DOI :
10.1109/ISDRS.2003.1272185
