Title :
Ultrathin (2.7 nm) oxy-nitride for suppressing boron penetration characterized by direct hole tunneling current in p+/pMOS
Author :
Yu, Chih-hsing ; Chen, Ming-chen ; Chi, Min-Hwa
Author_Institution :
Center for Technol. Dev., Worldwide Semicond. Manuf. Corp., Hsinchu, Taiwan
Abstract :
One key issue in advanced CMOS technology is the boron penetration effect. In this paper, ultra-thin gate oxy-nitride (2.5 nm~2.7 nm) is characterized by direct hole and electron tunneling currents in p-MOSFETs. The gate oxide with nitrogen-rich layer on top is the most effective for boron penetration suppression. The NO-nitridation is also more effective in suppressing boron diffusion than N2O-nitridation
Keywords :
CMOS integrated circuits; MOSFET; boron; dielectric thin films; diffusion; hole mobility; nitridation; silicon compounds; tunnelling; 2.5 to 2.7 nm; CMOS technology; N2O; N2O-nitridation; NO; NO-nitridation; Si:B; SiON-SiO2-Si; boron diffusion suppression; boron penetration effect; boron penetration suppression; direct hole tunneling current; electron tunneling current; gate oxide; nitrogen-rich top layer; p+/pMOS; p-MOSFETs; ultra-thin gate oxy-nitride; ultrathin oxy-nitride; Boron; CMOS technology; Charge carrier processes; Charge measurement; Current measurement; Doping; Implants; Testing; Transistors; Tunneling;
Conference_Titel :
Semiconductor Manufacturing Technology Workshop, 2000
Conference_Location :
Hsinchu
Print_ISBN :
0-7803-6374-4
DOI :
10.1109/SMTW.2000.883090
