Title :
A novel self-aligned gate-lost MOSFET process comparing high-κ candidates
Author :
On Chui, Chi ; Kim, Hyoungsub ; McVittie, James P. ; Triplett, Baylor B. ; McIntyre, Paul C. ; Saraswat, Krishna C.
Author_Institution :
Dept. of Electr. Eng., Stanford Univ., CA, USA
Abstract :
In this paper the two metal oxide dielectrics (ZrO2 and HfO2) deposited in the same chamber with the same technique using a newly developed self-aligned gate-last MOSFET process are compared. The compared results suggested that using either ZrO2 or HfO2 would provide similar on-to-off current ratio at a given device size.
Keywords :
MOSFET; dielectric devices; dielectric materials; dielectric thin films; hafnium compounds; zirconium compounds; 300 degC; HfO2; ZrO2; atomic layer deposition; metal oxide dielectrics; self aligned gate lost MOSFET process; Artificial intelligence; Atomic layer deposition; Electrodes; Etching; Gate leakage; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; MOSFET circuits; Materials science and technology;
Conference_Titel :
Semiconductor Device Research Symposium, 2003 International
Print_ISBN :
0-7803-8139-4
DOI :
10.1109/ISDRS.2003.1272191
