DocumentCode :
2618817
Title :
Run-to-run control schemes for CMP process subject to deterministic drifts
Author :
Guo, Ruey-Shan ; Chen, Argon ; Chen, Jin-Jung
Author_Institution :
Dept. of Ind. Manage. & Bus. Adm., Nat. Taiwan Univ., Taipei, Taiwan
fYear :
2000
fDate :
2000
Firstpage :
251
Lastpage :
258
Abstract :
During IC fabrication, the chemical-mechanical polishing (CMP) process usually suffers from a drift in the run-to-run removal rate due to the wear of the polishing pad. In this paper, two run-to-run control schemes, the predictor corrector control (PCC) and adjusted exponentially weighted moving average (d-EWMA) schemes, for processes under deterministic drifts are presented. The control performance of both schemes is analytically derived and the determination of the optimal control parameters is provided. Validation results using the field CMP data demonstrate the control effectiveness of both control schemes
Keywords :
chemical mechanical polishing; control system analysis; integrated circuit manufacture; moving average processes; optimal control; predictor-corrector methods; process control; wear; CMP process; IC fabrication; PCC; chemical-mechanical polishing; control effectiveness; control performance; control schemes; d-EWMA; deterministic drifts; exponentially weighted moving average scheme; field CMP data validation; optimal control parameters; polishing pad wear; predictor corrector control; run-to-run control schemes; run-to-run removal rate drift; Chemical industry; Chemical processes; Control systems; Engineering management; Fabrication; Feedback control; Optimal control; Performance analysis; Process control; Textile industry;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Manufacturing Technology Workshop, 2000
Conference_Location :
Hsinchu
Print_ISBN :
0-7803-6374-4
Type :
conf
DOI :
10.1109/SMTW.2000.883103
Filename :
883103
Link To Document :
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