Statistical modeling of MOS devices and ICs based on end-of-line manufacturing data

Author

Zhang, Q. ; Liou, J. ; McMacken, J. ; Stiles, K. ; Thomson, J. ; Layman, P.

Author_Institution

Dept. of ECE, Central Florida Univ., Orlando, FL, USA

fYear

2000

fDate

2000

Firstpage

259

Lastpage

267

Abstract

A practical and efficient statistical MOSFET model based on the industry standard BSIM3 model and routine manufacturing data is developed. The model allows for the prediction of performance spread of MOS devices and integrated circuits at the end of manufacturing line and can be updated frequently to reflect process changes. As a result, the statistical model developed can be used to reduce the MOS IC development cycle time and manufacturing cost. The statistical model is applied to the 0.25 μm MOS technology and verified on different MOS devices and two 501-stage ring oscillator circuits

Keywords

MOS integrated circuits; MOSFET; integrated circuit manufacture; integrated circuit modelling; oscillators; semiconductor device models; statistical analysis; 0.25 micron; MOS IC development cycle time; MOS IC manufacturing cost; MOS ICs; MOS devices; MOS integrated circuits; MOS technology; end-of-line manufacturing data; industry standard BSIM3 model; manufacturing data; manufacturing line; performance spread prediction; ring oscillator circuits; statistical MOSFET model; statistical model; statistical modeling; Costs; Integrated circuit manufacture; Integrated circuit modeling; MOS devices; MOSFET circuits; Manufacturing industries; Manufacturing processes; Predictive models; Standards development; Virtual manufacturing;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Manufacturing Technology Workshop, 2000

Conference_Location

Hsinchu

Print_ISBN

0-7803-6374-4

Type

conf

DOI

10.1109/SMTW.2000.883104

Filename

883104