• DocumentCode
    2618839
  • Title

    Analytical expression of body factor in short channel bulk MOSFETs

  • Author

    Kumar, Anil ; Nagumo, Toshiharu ; Tsutsui, Gen ; Hiramoto, Toshiro

  • Author_Institution
    Dept. of Ind. Sci., Tokyo Univ., Japan
  • fYear
    2003
  • fDate
    10-12 Dec. 2003
  • Firstpage
    476
  • Lastpage
    477
  • Abstract
    The analytical expressions for body factor in short channel bulk MOSFETs were obtained. The relationship of γ and S factor is also clarified. The model results were verified with two-dimensional simulation using MEDICI. The model is compared with the 2D simulation results.
  • Keywords
    MOSFET; semiconductor device models; 2D simulation; S factor; analytical expression; semiconductor device modeling; short channel bulk MOSFET; two dimensional simulation; Analytical models; Degradation; Doping; Electricity supply industry; Energy consumption; MOSFETs; Semiconductor process modeling; Solid state circuit design; Threshold voltage; Voltage control;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Device Research Symposium, 2003 International
  • Print_ISBN
    0-7803-8139-4
  • Type

    conf

  • DOI
    10.1109/ISDRS.2003.1272200
  • Filename
    1272200