Title :
Analytical expression of body factor in short channel bulk MOSFETs
Author :
Kumar, Anil ; Nagumo, Toshiharu ; Tsutsui, Gen ; Hiramoto, Toshiro
Author_Institution :
Dept. of Ind. Sci., Tokyo Univ., Japan
Abstract :
The analytical expressions for body factor in short channel bulk MOSFETs were obtained. The relationship of γ and S factor is also clarified. The model results were verified with two-dimensional simulation using MEDICI. The model is compared with the 2D simulation results.
Keywords :
MOSFET; semiconductor device models; 2D simulation; S factor; analytical expression; semiconductor device modeling; short channel bulk MOSFET; two dimensional simulation; Analytical models; Degradation; Doping; Electricity supply industry; Energy consumption; MOSFETs; Semiconductor process modeling; Solid state circuit design; Threshold voltage; Voltage control;
Conference_Titel :
Semiconductor Device Research Symposium, 2003 International
Print_ISBN :
0-7803-8139-4
DOI :
10.1109/ISDRS.2003.1272200
