DocumentCode
2618969
Title
Single-electron turnstile using Si-wire charge-coupled devices
Author
Fujiwara, Akira ; Zimmerman, N.M. ; Ono, Yukinori ; Takahash, Yasuo
Author_Institution
NTT Basic Res. Lab., NTT Corp., Atsugi, Japan
fYear
2003
fDate
10-12 Dec. 2003
Firstpage
485
Lastpage
486
Abstract
This paper reports a quantized current in a Si-wire charge-coupled device (CCD), which simply consists of a Si-wire channel with gates. Based on a simple gate-voltage control of tunnel barriers, current plateaus were observed successfully at 20 K with frequencies up to 100 MHz. SEM observations were made for the fabricated device, it shows that the charge island is mainly coupled to the upper and wide gate.
Keywords
charge-coupled devices; elemental semiconductors; scanning electron microscopy; semiconductor quantum wires; silicon; single electron devices; 20 K; CCD; SEM; Si; Si-wire channel; Si-wire charge coupled devices; charge island; current plateaus; gate-voltage control; quantized current; single electron turnstile; tunnel barriers; Charge transfer; Clocks; Cryptography; Electrons; Frequency; Laboratories; NIST; Pulse modulation; Tunneling; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Device Research Symposium, 2003 International
Print_ISBN
0-7803-8139-4
Type
conf
DOI
10.1109/ISDRS.2003.1272208
Filename
1272208
Link To Document