DocumentCode :
2619
Title :
Compact Triple-Transistor Doherty Amplifier Designs: Differential/Power Combining
Author :
Shichang Chen ; Quan Xue
Author_Institution :
State Key Labs. of Millimeter Waves, City Univ. of Hong Kong, Kowloon, China
Volume :
61
Issue :
5
fYear :
2013
fDate :
May-13
Firstpage :
1957
Lastpage :
1963
Abstract :
This paper investigates two novel triple-transistor Doherty power amplifier (DPA) designs. A compact fully differential DPA topology will be firstly introduced. Three active devices, two carriers, and one peaking are combined in a very judicious way to amplify the differential signal like what a typical Doherty amplifier does. Due to the reduction of transistor number from four for a classic differential DPA to three, the realization cost and layout dimension is reduced simultaneously. A second triple-transistor design, which amplifies an in-phase input signal and outputs a combined single-ended one, is introduced next. Similar to the differential design, a twin-carrier single-peaking configuration is applied. The functions of Doherty amplification and power combining are well integrated. Theoretical analysis will be given for a deep understanding of the operation principles regarding these two proposed architectures. To validate their effectiveness, prototypes corresponding to them are implemented based on Cree´s GaN HEMT CGH40010. Experimental results demonstrate notably high drain efficiencies at saturation and 6-dB back-off regions for both of the designs.
Keywords :
III-V semiconductors; gallium compounds; high electron mobility transistors; power amplifiers; power combiners; DPA designs; Doherty amplification; GaN; HEMT CGH40010; active devices; back-off regions; classic differential DPA; compact fully differential DPA topology; compact triple-transistor Doherty amplifier designs; differential combining; differential design; differential signal; drain efficiency; in-phase input signal; layout dimension; power combining; realization cost; single-ended one; transistor reduction; triple-transistor Doherty power amplifier designs; triple-transistor design; twin-carrier single-peaking configuration; Differential power amplifier (PA); Doherty amplifier; drain efficiency; load modulation network; power combining;
fLanguage :
English
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9480
Type :
jour
DOI :
10.1109/TMTT.2013.2253794
Filename :
6490446
Link To Document :
بازگشت