Title :
Ohmic contact spike arrays for nanostructure device fabrication: spike distribution and geometrical scattering of the electron-wave current
Author :
Newbury, R. ; Taylor, R.P. ; Sachrajda, A.S. ; Coleridge, P.T. ; Feng, Y. ; Davies, M. ; McCaffrey, J.P.
Author_Institution :
Sch. of Phys., New South Wales Univ., Sydney, NSW, Australia
Abstract :
We examine the ohmic contact-semiconductor interface and the process of current injection in a high mobility GaAs/AlGaAs Corbino device. Magneto-transport measurements demonstrate that weak localisation processes occur within the region of the 2DEG penetrated by the spike array formed on annealing of the ohmic contacts. These studies indicate that patterned ohmic contacts can provide a useful alternative to gated or etched sub-micron structures for fundamental mesoscopic physics investigations
Keywords :
Corbino effect; III-V semiconductors; aluminium compounds; annealing; arrays; gallium arsenide; magnetoresistance; mesoscopic systems; ohmic contacts; quantum interference devices; quantum interference phenomena; semiconductor heterojunctions; semiconductor-metal boundaries; two-dimensional electron gas; 2DEG; GaAs-AlGaAs; Ge-Au-Ni-Au; current injection; electron-wave current geometrical scattering; high mobility GaAs/AlGaAs Corbino device; low field magnetoresistance; magneto-transport measurements; mesoscopic physics; nanostructure device fabrication; ohmic contact annealing; ohmic contact spike arrays; ohmic contact-semiconductor interface; patterned ohmic contacts; spike distribution; weak localisation processes; Annealing; Etching; Fabrication; Gallium arsenide; Metallization; Nanoscale devices; Ohmic contacts; Optical scattering; Physics; Surface morphology;
Conference_Titel :
Optoelectronic and Microelectronic Materials And Devices Proceedings, 1996 Conference on
Conference_Location :
Canberra, ACT
Print_ISBN :
0-7803-3374-8
DOI :
10.1109/COMMAD.1996.610104
