Title :
Process technology for submicron BiCMOS VLSI
Author_Institution :
Texas Instrum. Inc., Dallas, TX, USA
Abstract :
Submicron BiCMOS is rapidly emerging as the technology of choice for many high-performance VLSI memory and logic applications. Compared to their CMOS counterparts, BiCMOS circuits can be up to a factor of two faster for the same level of technology maturity. Access times below 10 ns are being reported for 0.8-μm BiCMOS ECL (emitter-coupled logic) input/output 256 K and 1 Mb SRAMs, and 100 K gate arrays are capable of 100-MHz clock rates. Recent advances in submicron BiCMOS device structures and process technology that have made these previously unobtainable performance-density levels possible are reviewed
Keywords :
BIMOS integrated circuits; VLSI; digital integrated circuits; integrated circuit technology; reviews; 0.8 micron; 1 Mbit; BiCMOS ECL; SRAM; access time; clock rates; emitter-coupled logic; gate arrays; high-performance VLSI memory; process technology; reviews; submicron BiCMOS VLSI; BiCMOS integrated circuits; Bipolar transistors; CMOS process; CMOS technology; Etching; Instruments; MOS devices; Process design; Resists; Very large scale integration;
Conference_Titel :
Circuits and Systems, 1990., IEEE International Symposium on
Conference_Location :
New Orleans, LA
DOI :
10.1109/ISCAS.1990.112107
