Application of BiCMOS to smart power devices

Author

Huang, J.S.T.

Author_Institution

Honeywell Inc., Plymouth, MN, USA

fYear

1990

fDate

1-3 May 1990

Firstpage

1975

Abstract

The state-of-the-art power switch is the insulated gate transistor (IGT) in which MOS and bipolar devices are functionally merged. It is shown that with the advent of BiCMOS technology, lateral IGT-like structures can easily be fabricated together with signal-conditioning and logic circuits on the same die, providing smart power. With few process modifications, a wide variety of power devices having different current and speed characteristics can be realized simply by varying cell designs and/or chip layouts. It is concluded that the lateral-MOS-controlled thyristor, having the lowest forward voltage drop among all lateral devices appears to be an attractive choice for future smart-power applications

Keywords

BIMOS integrated circuits; insulated gate bipolar transistors; integrated circuit technology; power integrated circuits; thyristors; BiCMOS technology; bipolar devices; cell designs; chip layouts; current characteristics; insulated gate transistor; lateral IGT structure; lateral MOS controlled thyristor; logic circuits; power switch; signal-conditioning; smart power devices; speed characteristics; Anodes; BiCMOS integrated circuits; Cathodes; Equivalent circuits; Insulation; MOS devices; Solid state circuits; Switches; Thyristors; Voltage control;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 1990., IEEE International Symposium on

Conference_Location

New Orleans, LA

Type

conf

DOI

10.1109/ISCAS.1990.112111

Filename

112111