Title :
High voltage switch using series-connected IGBTs with simple auxiliary circuit
Author :
Baek, J.W. ; Yoo, D.W. ; Kim, H.G.
Author_Institution :
Power Electron. Res. Group, Korea Electrotechnol. Res. Inst., Changwon, South Korea
Abstract :
There is much need for high voltage solid-state-switches in a broad area of applications. To get a high voltage switch, the series-connection of a solid state device is usually used. The main problem in such high voltage switches is to guarantee the voltage balance across the device both at a static and dynamic transient state. This paper presents a simple and reliable voltage-balancing scheme of the high voltage switch stack using series-connected IGBTs. With the proposed method, using a simple voltage balancing circuit, high-voltage semiconductor switches are realized with working voltages of several orders of kilo-volts. The operation principle of the proposed circuit is explained and analyzed. Transient and static voltage balancing is tested on an experimental 20 kV/400 A switch with sixteen series-connected IGBT modules
Keywords :
bipolar transistor switches; insulated gate bipolar transistors; power bipolar transistors; power semiconductor switches; switchgear; 20 kV; 400 A; auxiliary circuit; high-voltage solid-state switch; operation principle; series-connected IGBTs; static voltage balancing; transient voltage balancing; voltage-balancing circuit; Circuit testing; Clamps; Insulated gate bipolar transistors; Snubbers; Solid state circuits; Switched capacitor circuits; Switches; Switching circuits; Switching frequency; Voltage;
Conference_Titel :
Industry Applications Conference, 2000. Conference Record of the 2000 IEEE
Conference_Location :
Rome
Print_ISBN :
0-7803-6401-5
DOI :
10.1109/IAS.2000.883136