DocumentCode :
2619433
Title :
A 3.6 ns 1 Kb ECL I/O BiCMOS UV EPROM
Author :
Smith, Doug ; Zeiter, John ; Bowman, Terry ; Rahm, Jeff ; Kertis, Bob ; Hall, Ann ; Natan, Saul ; Sanderson, Len ; Tromp, Rob ; Tsang, Joseph
fYear :
1990
fDate :
1-3 May 1990
Firstpage :
1987
Abstract :
A 1 K-density EPROM with input and output levels available in ECL (emitter-coupled logic) 100 K or 10 K with a masking option is described. TTL (transistor-transistor logic) I/O (input/output)-compatible programming and verify modes allow the memory array to be programmed with standard EPROM (erasable programmable read-only memory) hardware and software. The EPROM is essentially two devices in one. It is an ECL ROM (read-only memory) with a high-speed ECL read path. The die can be configured to 100 K or 10 K ECL I/O level with a metal mask option. It is also a UV erasable and testable CMOS EPROM. The EPROM uses a standard TTL I/O programmer for programming and verification
Keywords :
BIMOS integrated circuits; EPROM; emitter-coupled logic; integrated memory circuits; transistor-transistor logic; 1 kbit; 3.6 ns; BiCMOS EPROM; ECL I/O BiCMOS UV EPROM; ECL ROM; TTL I/O programmer; UV erasable CMOS EPROM; emitter-coupled logic; erasable programmable read-only memory; input/output compatible programming; memory array; metal mask option; read-only memory; transistor-transistor logic; verification; BiCMOS integrated circuits; EPROM; Hardware; Logic devices; Logic programming; PROM; Programmable logic arrays; Read only memory; Software standards; Testing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Circuits and Systems, 1990., IEEE International Symposium on
Conference_Location :
New Orleans, LA
Type :
conf
DOI :
10.1109/ISCAS.1990.112119
Filename :
112119
Link To Document :
بازگشت