Title :
Barrier-enhanced InGaAs/InAlAs photodetectors using quantum-well intermixing
Author :
Tait, Gregory B. ; Ameen, David B.
Author_Institution :
Dept. of Electr. Eng., Virginia Commonwealth Univ., Richmond, VA, USA
Abstract :
A thin barrier-enhancement region on quantum well InGaAs/InAlAs MSM photodetector is incorporated in between the two-dimensional quantum channel and the three-dimensional metal contact. One-dimensional and uniform strong electric field throughout the transport direction in the quantum channel is obtained by contacting this quantum channel laterally. This region is modeled by a quantum mechanical boundary condition in the numerical carrier transport simulation. Effects of this thin boundary on InGaAs/InAlAs MSM photodetector dark and transient current responses are presented.
Keywords :
III-V semiconductors; aluminium compounds; dark conductivity; electron mobility; gallium arsenide; hole mobility; indium compounds; photodetectors; quantum well devices; semiconductor device models; semiconductor epitaxial layers; InGaAs-InAlAs; barrier enhanced InGaAs/InAlAs photodetectors; dark current; numerical carrier transport simulation; quantum channel; quantum mechanical boundary condition; quantum well InGaAs/InAlAs photodetectors; quantum well intermixing; thin barrier enhancement region; three dimensional metal contact; transient current; two dimensional quantum channel; uniform strong electric field; Bandwidth; Dark current; Electrodes; Indium compounds; Indium gallium arsenide; Photoconductivity; Photodetectors; Quantum well devices; Quantum wells; Schottky barriers;
Conference_Titel :
Semiconductor Device Research Symposium, 2003 International
Print_ISBN :
0-7803-8139-4
DOI :
10.1109/ISDRS.2003.1272235
