Title :
Simulation of interface roughness in DG-MOSFETs using non-equilibrium Green´s functions
Author :
Fonseca, J. ; Kaya, S.
Author_Institution :
Ohio Univ., Athens, OH, USA
Abstract :
The interface roughness is a crucial factor in DG-MOSFET performance, as indicated by the International Technology Roadmap for semiconductors. A modified nanoMOS simulator is employed based on the non-equilibrium Green´s function (NEGF) to model DG-MOSFETs with rough interfaces. Reconstruction of rough interfaces with accurate spectral models is based on a 1D Fourier synthesis.
Keywords :
Fourier analysis; Green´s function methods; MOSFET; interface roughness; semiconductor device models; DG-MOSFET; Fourier synthesis; interface roughness; nanoMOS simulation; nonequilibrium Green´s functions; rough interfaces; Electrons; Fluctuations; Green´s function methods; MOSFETs; Nanoscale devices; Quantization; Scattering; Silicon; Substrates; Tunneling;
Conference_Titel :
Semiconductor Device Research Symposium, 2003 International
Print_ISBN :
0-7803-8139-4
DOI :
10.1109/ISDRS.2003.1272238
