Title :
Monolithic GaAs programmable parallel-to-serial and serial-to-parallel converters
Author :
Burrier, R.A. ; Singh, H.P. ; Sadler, R.A. ; Lopez-Miranda, W. ; Irvine, J.A.
Author_Institution :
ITT Gallium Arsenide Technol. Center, Roanoke, VA, USA
Abstract :
GaAs monolithic parallel-to-serial (P/S) and serial-to-parallel (S/P) converters which provide significant improvements in speed and power performance over previously reported devices are described. The converters are designed with an architecture that provides automatic frame synchronization, simple cascadability, and low power dissipation. Each chip provides an output clock in phase with the output data to facilitate postprocessing. The P/S and S/P chips operate at data rates of 1.9 Gb/s and 2.1 Gb/s, respectively, and each requires less than 120 mW of power. The chips are implemented with DCFL using a version of ITT´s multifunction self-aligned gate fabrication process
Keywords :
III-V semiconductors; code convertors; field effect integrated circuits; gallium arsenide; integrated logic circuits; 1.9 Gbit/s; 120 mW; 2.1 Gbit/s; DCFL; GaAs; MSAG process; automatic frame synchronization; cascadability; direct coupled FET logic; low power dissipation; multifunction self-aligned gate fabrication process; parallel/serial convertor; serial/parallel convertor; time division demultiplexer; time division multiplexer; Automatic control; Circuit testing; Clocks; Counting circuits; FETs; Frequency synchronization; Gallium arsenide; Logic; Power dissipation; Shift registers;
Conference_Titel :
Circuits and Systems, 1990., IEEE International Symposium on
Conference_Location :
New Orleans, LA
DOI :
10.1109/ISCAS.1990.112129