Title :
Temperature dependence and compensation in MOS dosimeters using bias controlled cycled measurement.
Author :
Lipovetzky, J. ; Redin, E. ; Inza, M. Garcia ; Carbonetto, S. ; Faigón, A.
Author_Institution :
Device Physics Laboratory-Microelectronics, Departamento de FÃ\xadsica, Facultad de IngenierÃ\xada, Universidad de Buenos Aires, Av. Paseo Colón 850, C1063ACV, ARGENTINA
Abstract :
Temperature dependence of MOS dosimeters response used under the Bias Controlled Cycled Measurement technique is investigated. The use of the biasing technique allows the compensation of temperature-induced changes in the response of the sensors, and reduces at least ten times the dose measurement error caused by undesired threshold voltage shifts.
Keywords :
Acceleration; Charge carrier processes; Electron traps; MOSFETs; Nuclear and plasma sciences; Spontaneous emission; Temperature control; Temperature dependence; Temperature sensors; Threshold voltage;
Conference_Titel :
Nuclear Science Symposium Conference Record, 2008. NSS '08. IEEE
Conference_Location :
Dresden, Germany
Print_ISBN :
978-1-4244-2714-7
Electronic_ISBN :
1095-7863
DOI :
10.1109/NSSMIC.2008.4774575
