Title :
Saturation of effective channel length increase due to hot carrier degradation in submicron LDD nMOSFETs
Author :
Kim, Jae-Yeong ; Kang, Moon-Sang ; Koo, Yong-Seo ; An, Chul
Author_Institution :
Dept. of Electron. Eng., Sogang Univ., Seoul, South Korea
Abstract :
The effective channel length of submicron LDD nMOSFETs after hot carrier degradation was measured. After the hot carrier stressing, the effective channel lengths were increased with time but saturated after a certain threshold time of about 1000 s. The saturation nature of hot carrier degradation in LDD nMOSFETs can be understood through the saturation of the effective channel length
Keywords :
MOSFET; hot carriers; 1000 s; effective channel length increase saturation; hot carrier degradation; submicron LDD nMOSFETs; threshold time; Degradation; Electric variables; Hot carriers; Length measurement; MOS devices; MOSFETs; Stress measurement; Thickness measurement; Very large scale integration; Voltage;
Conference_Titel :
Optoelectronic and Microelectronic Materials And Devices Proceedings, 1996 Conference on
Conference_Location :
Canberra, ACT
Print_ISBN :
0-7803-3374-8
DOI :
10.1109/COMMAD.1996.610109
