Title :
Analysis of intermodulation nulling in HEMTs
Author :
Qu, Guoli ; Parker, Anthony E.
Author_Institution :
Dept. of Electron., Macquarie Univ., Sydney, NSW, Australia
Abstract :
This paper examines intermodulation nulling generated by the nonlinear current voltage characteristics of HEMTs. The conditions for intermodulation cancellation in terms of the coefficients of a two-dimensional Taylor´s series expansion are established and verified with measurement and simulation. Second and third-order intermodulation cancellation can be assessed by simple examination of the transconductance characteristics of the device. This permits routine selection of optional bias after characterising the devices
Keywords :
electric admittance; high electron mobility transistors; intermodulation distortion; semiconductor device models; semiconductor device noise; series (mathematics); HEMTs; intermodulation cancellation conditions; intermodulation nulling; measurement; nonlinear current voltage characteristics; optional bias; second-order intermodulation cancellation; simulation; third-order intermodulation cancellation; transconductance characteristics; two-dimensional Taylor´s series expansion; Character generation; Current-voltage characteristics; Distortion measurement; HEMTs; Intermodulation distortion; MODFETs; Nonlinear distortion; System performance; Taylor series; Transconductance;
Conference_Titel :
Optoelectronic and Microelectronic Materials And Devices Proceedings, 1996 Conference on
Conference_Location :
Canberra, ACT
Print_ISBN :
0-7803-3374-8
DOI :
10.1109/COMMAD.1996.610112
