Analysis of intermodulation nulling in HEMTs

Author

Qu, Guoli ; Parker, Anthony E.

Author_Institution

Dept. of Electron., Macquarie Univ., Sydney, NSW, Australia

fYear

1996

fDate

8-11 Dec 1996

Firstpage

227

Lastpage

230

Abstract

This paper examines intermodulation nulling generated by the nonlinear current voltage characteristics of HEMTs. The conditions for intermodulation cancellation in terms of the coefficients of a two-dimensional Taylor´s series expansion are established and verified with measurement and simulation. Second and third-order intermodulation cancellation can be assessed by simple examination of the transconductance characteristics of the device. This permits routine selection of optional bias after characterising the devices

Keywords

electric admittance; high electron mobility transistors; intermodulation distortion; semiconductor device models; semiconductor device noise; series (mathematics); HEMTs; intermodulation cancellation conditions; intermodulation nulling; measurement; nonlinear current voltage characteristics; optional bias; second-order intermodulation cancellation; simulation; third-order intermodulation cancellation; transconductance characteristics; two-dimensional Taylor´s series expansion; Character generation; Current-voltage characteristics; Distortion measurement; HEMTs; Intermodulation distortion; MODFETs; Nonlinear distortion; System performance; Taylor series; Transconductance;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials And Devices Proceedings, 1996 Conference on

Conference_Location

Canberra, ACT

Print_ISBN

0-7803-3374-8

Type

conf

DOI

10.1109/COMMAD.1996.610112

Filename

610112