Microwave characteristics of the MODFET and the velocity-saturated MOSFET wave-equation

Author

Roblin, Patrick ; Kang, Sung Choon ; Morkoç, Hadis

Author_Institution

Dept. of Electr. Eng., Ohio State Univ., Columbus, OH, USA

fYear

1990

fDate

1-3 May 1990

Firstpage

1501

Abstract

An analytic solution has been derived for the MOSFET/MODFET wave equation including velocity saturation and channel length modulation, and results on its application to the prediction of the microwave characteristics of a MODFET are presented. A theoretical investigation of the high-frequency dependence of the calculated unilateral power gain U has been carried out, and conditions under which a switch from a 6-dB to 12-dB drop per octave is possible at large frequencies are reported. Novel current and voltage gains are proposed which permit meaningful comparison of the ordering of the current and voltage gain cutoff-frequencies with f_max

Keywords

high electron mobility transistors; insulated gate field effect transistors; semiconductor device models; solid-state microwave devices; MOSFET/MODFET wave equation; analytic solution; channel length modulation; current gain cutoff-frequency; f_max; high-frequency dependence; microwave characteristics; roll off 12 dB per octave; unilateral power; velocity saturation; velocity-saturated MOSFET wave-equation; voltage gain cutoff-frequency; Data mining; FETs; Frequency estimation; Gallium arsenide; HEMTs; MODFET circuits; MOSFET circuits; Poisson equations; Switches; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 1990., IEEE International Symposium on

Conference_Location

New Orleans, LA

Type

conf

DOI

10.1109/ISCAS.1990.112168

Filename

112168