A new functional AlGaAs/InGaAs/GaAs heterostructure-emitter and heterostructure-base transistor (HEHBT)

Author

Liu, Wen-Chau ; Tsai, Jung-Hui ; Laih, Lih-Wen ; Chen, Jing-Yuh ; Cheng, Shiou-Y Ing ; Wang, Wei-Chou ; Lin, Po-Hung ; Jing-Yuh Chen

Author_Institution

Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan

fYear

1996

fDate

8-11 Dec 1996

Firstpage

247

Lastpage

250

Abstract

A new functional AlGaAs/InGaAs/GaAs heterostructure-emitter and heterostructure-base transistor (HEHBT) with a pseudomorphic base structure is presented. Due to the insertion of an InGaAs quantum well between the emitter-base (E-B) junctions, the valence band discontinuity can be enhanced and a high emitter injection efficiency may be achieved. In addition, an interesting S-shaped multiple negative differential resistance (MNDR) phenomenon is observed under the inverted operation mode. This may be attributed to an avalanche multiplication and sequential two-stage barrier lowering effect resulting from electron accumulation at the AlGaAs/GaAs heterointerface and InGaAs quantum well, respectively

Keywords

III-V semiconductors; aluminium compounds; avalanche breakdown; characteristics measurement; gallium arsenide; heterojunction bipolar transistors; indium compounds; negative resistance; semiconductor quantum wells; valence bands; AlGaAs-InGaAs-GaAs; AlGaAs/GaAs heterointerface; AlGaAs/InGaAs/GaAs heterostructure-emitter/heterostructure-base transistor; GaAs; InGaAs quantum well insertion; S-shaped multiple negative differential resistance; avalanche multiplication; electron accumulation; emitter injection efficiency; emitter-base junction; functional bipolar transistor; inverted operation mode; pseudomorphic base structure; sequential two-stage barrier lowering; valence band discontinuity; Bipolar transistors; Business; Carrier confinement; Digital circuits; Electron emission; Gallium arsenide; Heterojunction bipolar transistors; Indium gallium arsenide; Molecular beam epitaxial growth; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials And Devices Proceedings, 1996 Conference on

Conference_Location

Canberra, ACT

Print_ISBN

0-7803-3374-8

Type

conf

DOI

10.1109/COMMAD.1996.610117

Filename

610117