Investigation of step-doped channel heterostructure field-effect transistor

Author

Liu, Wen-Chau ; Laih, Lih-Wen ; Tsai, Jung-Hui ; Chen, Jing-Yuh ; Wang, Wei-Chou ; Lin, Po-Hung

Author_Institution

Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan

fYear

1996

fDate

8-11 Dec 1996

Firstpage

251

Lastpage

254

Abstract

Two kinds of heterostructure field-effect transistor (FET) with an InGaAs step-doped-channel (SDC) profile have been fabricated and demonstrated. For the 1×100 μm² gated dimension, the maximum drain saturation currents were 735 and 675 mA/mm, the maximum transconductances 200 and 232 mS/mm, the gate breakdown voltages 15 V and 12 V, and the wide gate voltage swing 3.3 and 2.6 V with transconductance g_m higher than 150 mS/mm. A simple model is employed to analyze the performance of threshold voltage V_T and values of -3.7 and -1.8 V are obtained. These good performances show that the SDCFET has a good potential for high-speed, high-power circuit applications

Keywords

III-V semiconductors; characteristics measurement; doping profiles; field effect transistors; gallium arsenide; indium compounds; semiconductor device models; -1.8 V; -3.7 V; 12 V; 15 V; 200 mS/mm; 232 mS/mm; AlGaAs-InGaAs-GaAs; GaAs; HFET; InGaAs step-doped-channel profile; gate breakdown voltages; high-speed high-power circuit applications; maximum drain saturation currents; maximum transconductances; model; step-doped channel heterostructure field-effect transistor; threshold voltage; wide gate voltage swing; Electrons; FETs; Gallium arsenide; HEMTs; Indium gallium arsenide; Linearity; MODFETs; Performance analysis; Threshold voltage; Transconductance;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials And Devices Proceedings, 1996 Conference on

Conference_Location

Canberra, ACT

Print_ISBN

0-7803-3374-8

Type

conf

DOI

10.1109/COMMAD.1996.610120

Filename

610120