Title :
Simulation of sub-micron ohmic contacts to GaAs
Author :
Li, Yao ; Harrison, H.Barry ; Reeves, Geoffrey K.
Author_Institution :
Sch. of Microelectron. Eng., Griffith Univ., Brisbane, Qld., Australia
Abstract :
Alloyed ohmic contacts to GaAs have been numerically simulated using the Boundary Element Methods. The simulation shows the voltage contours and current contribution in the contact region and external to it and provides characteristics which are unique to sub-micron ohmic contacts. An analytical model developed is in good agreement with the numeral simulation
Keywords :
III-V semiconductors; boundary-elements methods; current distribution; gallium arsenide; ohmic contacts; semiconductor device metallisation; semiconductor device models; semiconductor-metal boundaries; voltage distribution; GaAs; alloyed ohmic contacts; analytical model; boundary element methods; current contribution; numerical simulation; submicron ohmic contacts; voltage contours; Analytical models; Australia; Boundary element methods; Contact resistance; Gallium arsenide; Geometry; Microelectronics; Numerical simulation; Ohmic contacts; Voltage;
Conference_Titel :
Optoelectronic and Microelectronic Materials And Devices Proceedings, 1996 Conference on
Conference_Location :
Canberra, ACT
Print_ISBN :
0-7803-3374-8
DOI :
10.1109/COMMAD.1996.610121
