• DocumentCode
    2620392
  • Title

    Low temperature preparation of the SiO2 films with low interface trap density using ECR diffusion and ECR CVD method

  • Author

    Il-Hyun Jung ; In-Hwan Oh

  • fYear
    1996
  • fDate
    8-11 Dec 1996
  • Firstpage
    259
  • Lastpage
    262
  • Abstract
    Silicon oxide films were grown by Electron Cyclotron Resonance (ECR) diffusion and the ECR CVD method at low temperature. An MOS capacitor with 250 Å of oxide grown by ECR diffusion had a lower interface trap density of 4.24×109 cm-2·eV-1 than direct PECVD and remote PECVD. The measured interface oxide charge density for this film was 6.88×1011 cm-2. In the case of the ECR CVD method, interface trap density was lower than 2.01×1010 cm-2·eV-1
  • Keywords
    MOS capacitors; capacitance; diffusion; insulating thin films; interface states; plasma CVD; plasma deposition; silicon compounds; 250 angstrom; C-V characteristics; ECR CVD; ECR diffusion; MOS capacitor; Si-SiO2; SiO2 films; interface oxide charge density; low interface trap density; low temperature preparation; Charge measurement; Current measurement; Cyclotrons; Density measurement; Electron traps; MOS capacitors; Resonance; Semiconductor films; Silicon; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Optoelectronic and Microelectronic Materials And Devices Proceedings, 1996 Conference on
  • Conference_Location
    Canberra, ACT
  • Print_ISBN
    0-7803-3374-8
  • Type

    conf

  • DOI
    10.1109/COMMAD.1996.610122
  • Filename
    610122
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2620392