Design, fabrication and modelling of InGaAs/AlAs/InP resonant tunnelling diode

Author

Leung, C.S.Y. ; Skellern, D.J.

Author_Institution

Dept. of Electron., Macquarie Univ., NSW, Australia

fYear

1996

fDate

8-11 Dec 1996

Firstpage

263

Lastpage

266

Abstract

We have designed and fabricated In_0.53Ga_0.47As/AlAs resonant tunnelling diodes on an InP substrate. At room temperature, the devices exhibit two negative differential resistance regions at 0.13 V and 0.65 V, respectively, in their dc I-V characteristic curves. The second resonant peak has a current density of 3.0×10⁴ A/cm² and a peak-to-valley-ratio of 2:1. The measured tunnelling current and peak resonant voltages agree well with the theoretical calculations from a coherent tunnelling model. When the excess current is simulated by intervalley scattering of electrons, the resultant I-V curve matches very well with the experimental results

Keywords

III-V semiconductors; aluminium compounds; current density; gallium arsenide; indium compounds; negative resistance; resonant tunnelling diodes; semiconductor device models; semiconductor quantum wells; semiconductor technology; 0.13 V; 0.65 V; In_0.53Ga_0.47As-AlAs; InGaAs/AlAs/InP resonant tunnelling diode; InP; InP substrate; coherent tunnelling model; current density; dc I-V characteristic curves; design; fabrication; intervalley electron scattering; modelling; negative differential resistance regions; peak resonant voltages; peak-to-valley-ratio; resonant peak; room temperature; tunnelling current; Current density; Current measurement; Diodes; Electrical resistance measurement; Fabrication; Indium gallium arsenide; Indium phosphide; Resonance; Resonant tunneling devices; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials And Devices Proceedings, 1996 Conference on

Conference_Location

Canberra, ACT

Print_ISBN

0-7803-3374-8

Type

conf

DOI

10.1109/COMMAD.1996.610123

Filename

610123