Methods of measuring the electric-field-dependent absorbtion coefficient in quantum confined structures

Author

Siliquini, J.F. ; Xu, M.G. ; Membreno, G. A Umana ; Clark, A. ; Dell, J.M.

Author_Institution

Dept. of Electr. & Electron. Eng., Western Australia Univ., Nedlands, WA, Australia

fYear

1996

fDate

8-11 Dec 1996

Firstpage

293

Lastpage

296

Abstract

A review of methods measuring the electric-field-dependent absorption coefficient in quantum confined structures is presented. The methods proposed are based on an approximate modeling of a thin film structure which takes into account the reflections at the air-semiconductor interfaces and interference effects within the structure. It is shown that determination of the absorption coefficient from the measured photocurrent and transmitted power is the most robust against measurement errors and easiest to implement for complete modulator structures

Keywords

absorption coefficients; electroabsorption; semiconductor quantum wells; air-semiconductor interface; electric-field-dependent absorption coefficient measurement; interference; modulator; photocurrent; power transmission; quantum confined structure; reflection; thin film; Absorption; Electric variables measurement; Interference; Measurement errors; Photoconductivity; Potential well; Power measurement; Reflection; Robustness; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials And Devices Proceedings, 1996 Conference on

Conference_Location

Canberra, ACT

Print_ISBN

0-7803-3374-8

Type

conf

DOI

10.1109/COMMAD.1996.610128

Filename

610128