Title :
Misfit dislocations nucleated from the surface in strained-layer heterostructures
Author :
Zou, J. ; Cockayne, D.J.H.
Author_Institution :
Key Centre for Microscopy & Microanalysis, Sydney Univ., NSW, Australia
Abstract :
The nucleation of misfit dislocations from the surface in strained-layer heterostructures is considered theoretically. When the interface between the epitaxial layer and the substrate is included, the model suggested by Matthews and his co-workers needs to be modified
Keywords :
dislocation nucleation; semiconductor epitaxial layers; semiconductor heterojunctions; epitaxial layer substrate interface; misfit dislocation; strained-layer heterostructure; surface nucleation; Australia; Capacitive sensors; Electron microscopy; Energy barrier; Epitaxial layers; Semiconductor films; Semiconductor process modeling; Shape; Substrates;
Conference_Titel :
Optoelectronic and Microelectronic Materials And Devices Proceedings, 1996 Conference on
Conference_Location :
Canberra, ACT
Print_ISBN :
0-7803-3374-8
DOI :
10.1109/COMMAD.1996.610129
