Experimental determination of minority electron mobility in p-type pseudomorphic SiGe/Si

Author

Rieh, Jae-Sung ; Lu, Liang-Hung ; Katehi, L.P.B. ; Bhattacharya, P.K.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA

fYear

1998

fDate

18-18 Sept. 1998

Firstpage

10

Lastpage

15

Abstract

The minority electron mobility in the p-type pseudomorphic SiGe layer has been measured. SiGe/Si n-p-n HBTs have been fabricated with MBE-grown wafers and their DC and RF characteristics were used for the estimation of the mobility by the cutoff frequency method. The measured room temperature minority electron mobility values were found to be 302.7 cm/sup 2//V.s and 90.9 cm/sup 2//V.s for Ge composition of 20% and 40%, respectively, at the doping concentration of 7/spl times/10/sup 19/ cm/sup -3/. The corresponding drift diffusion constants were 7.87 cm/sup 2//s and 2.37 cm/sup 2//s, respectively. The observed trend may be useful information for the optimization of SiGe/Si HBTs for high-speed operation.

Keywords

Ge-Si alloys; electron mobility; elemental semiconductors; heterojunction bipolar transistors; microwave bipolar transistors; minority carriers; semiconductor epitaxial layers; semiconductor materials; silicon; DC characteristics; MBE-grown wafers; RF characteristics; SiGe-Si; cutoff frequency method; high-speed operation; minority electron mobility; n-p-n SiGe/Si HBTs; p-type pseudomorphic SiGe/Si; Cutoff frequency; Electric variables measurement; Electron mobility; Frequency estimation; Germanium silicon alloys; Heterojunction bipolar transistors; Molecular beam epitaxial growth; Silicon germanium; Substrates; Temperature measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon Monolithic Integrated Circuits in RF Systems, 1998. Digest of Papers. 1998 Topical Meeting on

Conference_Location

Ann Arbor, MI, USA

Print_ISBN

0-7803-5288-2

Type

conf

DOI

10.1109/SMIC.1998.750169

Filename

750169