Noise properties of SiGe heterojunction bipolar transistors

Author

Van Haaren, B. ; Regis, M. ; Gruhle, A. ; Mouis, M. ; Llopis, O. ; Escotte, L. ; Graffeuil, J. ; Plana, R.

Author_Institution

Lab. d´Autom. et d´Anal. des Syst., CNRS, Toulouse, France

fYear

1998

fDate

18-18 Sept. 1998

Firstpage

24

Lastpage

32

Abstract

In this paper, we present a SiGe HBT featuring very attractive LF noise properties with excess corner noise frequency lower than 1 kHz. Concerning the high frequency noise, we report noise figure <1 dB at 10 GHz for an abrupt HBT and of 0.5 dB at 2 GHz for an optimized gradual HBT. Finally, SiGe HBT allows the realization of a microwave oscillator in the 4.7 GHz range, featuring very low phase noise behavior -135 dBc/Hz at 10 kHz offset frequency.

Keywords

Ge-Si alloys; equivalent circuits; heterojunction bipolar transistors; microwave bipolar transistors; phase noise; semiconductor device measurement; semiconductor device models; semiconductor device noise; semiconductor materials; 0.5 to 1 dB; 2 to 10 GHz; HF noise; LF noise properties; SiGe; SiGe heterojunction bipolar transistors; abrupt HBT; excess corner noise frequency; high frequency noise; low phase noise behavior; microwave oscillator application; noise properties; optimized gradual HBT; Active noise reduction; Circuit noise; Costs; Frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Low-frequency noise; Millimeter wave technology; Phase noise; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon Monolithic Integrated Circuits in RF Systems, 1998. Digest of Papers. 1998 Topical Meeting on

Conference_Location

Ann Arbor, MI, USA

Print_ISBN

0-7803-5288-2

Type

conf

DOI

10.1109/SMIC.1998.750171

Filename

750171