Modelling and measurement of electro-thermal interaction in RF bipolar power transistors

Author

Mouthaan, E. ; Tinti, R. ; de Graaff, H.C. ; Tauritz, J.L. ; Slotboom, J.

Author_Institution

Lab. of Electron. Components, Technol. & Mater., Delft Univ. of Technol., Netherlands

fYear

1998

fDate

18-18 Sept. 1998

Firstpage

47

Lastpage

56

Abstract

This paper concentrates on a systematic approach to modelling the electro-thermal interaction in RF high power bipolar transistors. This research is principally motivated by an increasing demand from designers of power transistors for predictive models. The modelling of the electro-thermal interaction is very important in power transistors, since large dissipations lead to a significant increase in temperature. The temperature increase in turn changes the electrical behavior of the transistor.

Keywords

UHF bipolar transistors; power bipolar transistors; semiconductor device measurement; semiconductor device models; thermal analysis; RF bipolar power transistors; electrical behaviour; electro-thermal interaction; high power transistors; modelling; predictive models; temperature increase; Base stations; Fingers; Microwave technology; Power measurement; Power system modeling; Power transistors; Radio frequency; Silicon; Temperature distribution; Thermal resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon Monolithic Integrated Circuits in RF Systems, 1998. Digest of Papers. 1998 Topical Meeting on

Conference_Location

Ann Arbor, MI, USA

Print_ISBN

0-7803-5288-2

Type

conf

DOI

10.1109/SMIC.1998.750193

Filename

750193