Title :
X-band SiGe power HBT´s
Author :
Strong, R. ; Agarwal, A. ; Smith, T. ; Messham, R. ; Mani, S. ; Hegde, V. ; Hanes, M. ; Nathanson, H. ; Potyraj, P. ; Petrosky, K. ; Knight, T. ; Brabant, P.
Author_Institution :
ESSD, Northrop Grumman Corp., Pittsburgh, PA, USA
Abstract :
SiGe power heterojunction bipolar transistors were fabricated using the Northrop Grumman 6´´ bipolar line, which features a polysilicon emitter and SiGe epitaxial base. The power cell utilizes a fishbone structure, with an active area of 500 /spl mu/m/sup 2/ and 1100 /spl mu/m emitter perimeter. Discrete cells were packaged for CW power testing in common base mode at 8 GHz. 267 mW of output power was achieved using two cells in parallel in class-A operation; at 120 mW output power, the gain is 8 db.
Keywords :
Ge-Si alloys; heterojunction bipolar transistors; microwave bipolar transistors; microwave power transistors; power bipolar transistors; semiconductor materials; 120 mW; 267 mW; 8 GHz; 8 dB; Northrop Grumman 6 inch bipolar line; SiGe; SiGe epitaxial base; SiGe power HBT; X-band device; class-A operation; common base mode; polysilicon emitter; power cell fishbone structure; power heterojunction bipolar transistors; Capacitance; Circuits; Current supplies; Fingers; Germanium silicon alloys; Power generation; Power transistors; Radar; Silicon germanium; Substrates;
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems, 1998. Digest of Papers. 1998 Topical Meeting on
Conference_Location :
Ann Arbor, MI, USA
Print_ISBN :
0-7803-5288-2
DOI :
10.1109/SMIC.1998.750194
