All-silicon nonlinear transmission line using optimized Schottky diodes

Author

Birk, M. ; Kibbel, H. ; Rupp, M. ; Schmacher, H.

Author_Institution

Dept. of Electron. Devices & Circuits, Ulm Univ., Germany

fYear

1998

fDate

18-18 Sept. 1998

Firstpage

61

Lastpage

66

Abstract

Nonlinear Transmission Lines (NLTL) have been fabricated so far on GaAs substrates only. Recently, we were able to demonstrate a working nonlinear transmission line for the first time on high resistivity silicon proving the applicability of the NLTL concept to silicon millimeter wave integrated circuits (SIMMWICS). We have significantly improved our previous results by using optimized Schottky varactors. The falltime of 74 ps of a 4 GHz sine wave was compressed to 15 ps at the output of the NLTL, doubling the equivalent bandwidth of our first result.

Keywords

MIMIC; Schottky diodes; coplanar waveguide components; elemental semiconductors; silicon; transmission line theory; varactors; MM-wave ICs; Schottky varactors; Si; Si MIMIC; Si nonlinear transmission line; high resistivity Si substrate; millimeter wave integrated circuits; optimized Schottky diodes; Capacitance; Conductivity; Distributed parameter circuits; Gallium arsenide; Impedance; Millimeter wave transistors; Schottky diodes; Silicon; Transmission lines; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon Monolithic Integrated Circuits in RF Systems, 1998. Digest of Papers. 1998 Topical Meeting on

Conference_Location

Ann Arbor, MI, USA

Print_ISBN

0-7803-5288-2

Type

conf

DOI

10.1109/SMIC.1998.750195

Filename

750195