Coplanar silicon MMICs

Author

Heinrich, W. ; Rheinfelder, C.

Author_Institution

Ferdinand-Braun-Inst. fur Hochstfrequenztech., Berlin, Germany

fYear

1998

fDate

18-18 Sept. 1998

Firstpage

79

Lastpage

84

Abstract

Using a high-resistivity substrate SiGe HBT process by Daimler-Benz, MMIC oscillators with 3 dBm output power at 38 GHz as well as a 26 GHz amplifier and a 77 GHz diode mixer were fabricated. This demonstrates the potential of silicon-based ICs even for the millimeter-wave frequency range. The circuit concept follows the classical microwave design approach applying reactive matching on input and output. Coplanar design yields cost reduction compared to the microstrip case because backside processing is not necessary.

Keywords

MMIC amplifiers; MMIC mixers; MMIC oscillators; bipolar MIMIC; bipolar MMIC; elemental semiconductors; heterojunction bipolar transistors; integrated circuit design; millimetre wave amplifiers; millimetre wave mixers; millimetre wave oscillators; silicon; 26 to 77 GHz; Daimler-Benz; EHF diode mixer; MIMIC; MMIC oscillators; SHF amplifier; Si; Si-based MM-wave ICs; SiGe; SiGe HBT process; coplanar Si MMIC; cost reduction; high-resistivity substrate; millimeter-wave frequency range; reactive matching; Diodes; Germanium silicon alloys; Heterojunction bipolar transistors; High power amplifiers; MMICs; Microwave oscillators; Millimeter wave integrated circuits; Power amplifiers; Power generation; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon Monolithic Integrated Circuits in RF Systems, 1998. Digest of Papers. 1998 Topical Meeting on

Conference_Location

Ann Arbor, MI, USA

Print_ISBN

0-7803-5288-2

Type

conf

DOI

10.1109/SMIC.1998.750198

Filename

750198