Title :
1.0-V and 1.5-V operation of 4-GHz tuned amplifiers implemented in a 0.1-/spl mu/m CMOS technology on bulk and SOI substrates
Author :
Yo-Chuol Ho ; Wann, C. ; Yuan Taur ; Lagnado, I. ; O, K.K.
Author_Institution :
Dept. of Electr. & Comput. Eng., Florida Univ., Gainesville, FL, USA
Abstract :
4-GHz 1.5-V tuned amplifiers are implemented using a partially-scaled double-level-metal 0.1-/spl mu/m CMOS process on bulk and SOI substrates. The bulk and SOI amplifiers have forward transducer gains (S/sub 21/) of 14 and 11 dB at V/sub DD/=1.5 V. The bulk amplifier has F/sub min/´s of 3.6 and 4.5 dB at 3 and 4 GHz, respectively, with a power consumption of about 28 mW. When the supply voltage is reduced to 1.0 V, F/sub min/ is increased to 4.4 and 5.0 dB at 3.0 and 4.0 GHz, while the peak gain and power consumption are lowered to 9 dB and 12.7 mW, respectively, which are not significantly worse than those of 5.8-GHz silicon bipolar LNA´s.
Keywords :
CMOS analogue integrated circuits; MMIC amplifiers; circuit tuning; field effect MMIC; integrated circuit design; low-power electronics; silicon-on-insulator; substrates; 0.1 micron; 1 V; 1.5 V; 12.7 to 28 mW; 3 to 4 GHz; 9 to 14 dB; CMOS technology; SOI substrates; Si; bulk substrates; double-level-metal process; partially-scaled CMOS process; tuned amplifiers; CMOS technology; Gain measurement; Impedance matching; Inductors; Noise figure; Noise measurement; Power amplifiers; Power measurement; Resonant frequency; Transducers;
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems, 1998. Digest of Papers. 1998 Topical Meeting on
Conference_Location :
Ann Arbor, MI, USA
Print_ISBN :
0-7803-5288-2
DOI :
10.1109/SMIC.1998.750199
