Title :
SiGe HBT large-signal modelling and its application to the design of millimetre wave amplifiers
Author :
Arcioni, F. ; Pascual, J.P. ; Fernandez, T. ; Zamanillo, J.M. ; Mediavilla, A. ; Artal, E. ; Filimon, V. ; Luy, J.F.
Author_Institution :
Dipt. di Ingegneria Elettrica, Pavia Univ., Italy
Abstract :
In this paper, different topologies for linear and nonlinear SiGe HBT modelling are presented. The parameters are extracted from DC and S-parameters measurements. Good fitting is obtained in DC and scattering curves up to 50 GHz for different devices. A preliminary linear amplifier at 38 GHz, using SiGe HBT technology from Daimler-Benz research centre (Ulm, Germany), has been designed.
Keywords :
Ge-Si alloys; S-parameters; heterojunction bipolar transistors; millimetre wave amplifiers; millimetre wave bipolar transistors; semiconductor device models; semiconductor materials; 0 to 50 GHz; DC parameters; Daimler-Benz research centre; HBT large-signal modelling; S-parameters; SiGe; linear modelling; millimetre wave amplifiers; nonlinear modelling; preliminary linear amplifier; scattering curves; Data mining; Fingers; Frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Integrated circuit modeling; Millimeter wave technology; Scattering parameters; Silicon germanium; Topology;
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems, 1998. Digest of Papers. 1998 Topical Meeting on
Conference_Location :
Ann Arbor, MI, USA
Print_ISBN :
0-7803-5288-2
DOI :
10.1109/SMIC.1998.750203
