SiGe HBT large-signal modelling and its application to the design of millimetre wave amplifiers

Author

Arcioni, F. ; Pascual, J.P. ; Fernandez, T. ; Zamanillo, J.M. ; Mediavilla, A. ; Artal, E. ; Filimon, V. ; Luy, J.F.

Author_Institution

Dipt. di Ingegneria Elettrica, Pavia Univ., Italy

fYear

1998

fDate

18-18 Sept. 1998

Firstpage

105

Lastpage

112

Abstract

In this paper, different topologies for linear and nonlinear SiGe HBT modelling are presented. The parameters are extracted from DC and S-parameters measurements. Good fitting is obtained in DC and scattering curves up to 50 GHz for different devices. A preliminary linear amplifier at 38 GHz, using SiGe HBT technology from Daimler-Benz research centre (Ulm, Germany), has been designed.

Keywords

Ge-Si alloys; S-parameters; heterojunction bipolar transistors; millimetre wave amplifiers; millimetre wave bipolar transistors; semiconductor device models; semiconductor materials; 0 to 50 GHz; DC parameters; Daimler-Benz research centre; HBT large-signal modelling; S-parameters; SiGe; linear modelling; millimetre wave amplifiers; nonlinear modelling; preliminary linear amplifier; scattering curves; Data mining; Fingers; Frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Integrated circuit modeling; Millimeter wave technology; Scattering parameters; Silicon germanium; Topology;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon Monolithic Integrated Circuits in RF Systems, 1998. Digest of Papers. 1998 Topical Meeting on

Conference_Location

Ann Arbor, MI, USA

Print_ISBN

0-7803-5288-2

Type

conf

DOI

10.1109/SMIC.1998.750203

Filename

750203