Title :
Low cost voltage controlled oscillators for X-band mobile communication purposes realized with Si HBTs and SiGe HBTs
Author_Institution :
Daimler-Benz AG, Ulm, Germany
Abstract :
Design and test results of X-band low cost VCOs using silicon bipolar transistors (Siemens SIEGET T502A) and silicon-germanium HBTs (Vishay-Telefunken) as active devices are presented. The oscillators are realized on a 5 mil alumina substrate and can be operated between 9.4 GHz and 9.8 GHz. The employed varactor diode is a commercially available silicon chip (MACOM 45225-132). Measured phase noise data better than -89 dBe @ 100 kHz and -110 dBc @ 1 MHz demonstrate the suitability of these sources for key components in mobile communication systems.
Keywords :
Ge-Si alloys; elemental semiconductors; heterojunction bipolar transistors; microwave circuits; microwave oscillators; mobile communication; phase noise; semiconductor materials; silicon; varactors; voltage-controlled oscillators; 5 mil; 9.4 to 9.8 GHz; HBTs; MACOM 45225-132; Si; SiGe; Siemens SIEGET T502A; Vishay-Telefunken; X-band mobile communication; low cost voltage controlled oscillators; mobile communication systems; phase noise data; varactor diode; Bipolar transistors; Costs; Diodes; Germanium silicon alloys; Noise measurement; Phase measurement; Silicon germanium; Testing; Varactors; Voltage-controlled oscillators;
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems, 1998. Digest of Papers. 1998 Topical Meeting on
Conference_Location :
Ann Arbor, MI, USA
Print_ISBN :
0-7803-5288-2
DOI :
10.1109/SMIC.1998.750206
