Title :
X-band SiGe monolithic control circuits
Author :
Tayrani, R. ; Sakamoto, G. ; Chan, P. ; Van Leeuwen, R. ; Nguyen, T.
Author_Institution :
Solid State Microwave, Raytheon Syst. Co., Fullerton, CA, USA
Abstract :
This paper reports the performances of several X-band silicon-germanium (SiGe) monolithic microwave integrated circuits (MMICs) including multi-throw switches and attenuators designed using an optimized vertical PIN diode currently offered by IBM SiGe foundry process.
Keywords :
Ge-Si alloys; MMIC; attenuators; microwave switches; p-i-n diodes; semiconductor materials; SiGe; X-band; attenuators; foundry process; monolithic control circuits; monolithic microwave integrated circuits; multi-throw switches; optimized vertical PIN diode; Attenuators; Design optimization; Foundries; Germanium silicon alloys; MMICs; Microwave integrated circuits; Monolithic integrated circuits; Silicon germanium; Switches; Switching circuits;
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems, 1998. Digest of Papers. 1998 Topical Meeting on
Conference_Location :
Ann Arbor, MI, USA
Print_ISBN :
0-7803-5288-2
DOI :
10.1109/SMIC.1998.750207
