DocumentCode :
2621760
Title :
A concept of semiconductor optical routing device utilizing minority carrier drift
Author :
Tsukamoto, Hironori ; Boone, Thomas D. ; Woodall, Jerry M.
Author_Institution :
Dept. of Electr. Eng., Yale Univ., New Haven, CT, USA
fYear :
2003
fDate :
10-12 Dec. 2003
Firstpage :
516
Lastpage :
517
Abstract :
A novel concept of semiconductor optical routing device for short distance optical communication system, such as a board to board communication or grid computing. A semiconductor optical routing devices utilizing minority-carrier-drift was discussed. The feasibility of a multi-channel dynamic semiconductor optical routing devices operating for the first time. P-type modulation doped heterostructures were designed for SORDs. At room temperature PL emission from the Al0.9Ga0.1As barrier layers.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; minority carriers; optical fibre communication; photoluminescence; semiconductor devices; semiconductor epitaxial layers; 293 to 298 K; Al0.9Ga0.1As barrier layers; AlGaAs; PL emission; board to board communication; grid computing; minority carrier drift; p-type modulation doped heterostructures; room temperature; semiconductor optical routing device; short distance optical communication system; Electrons; Gallium arsenide; Optical devices; Optical fibers; Optical filters; Optical modulation; Probes; Routing; Signal generators; Stimulated emission;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Device Research Symposium, 2003 International
Print_ISBN :
0-7803-8139-4
Type :
conf
DOI :
10.1109/ISDRS.2003.1272369
Filename :
1272369
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2621760
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