Title :
Noise reduction in SiGe HBT oscillators
Author :
Filimon, V. ; Dragojevic, N. ; Strohm, K. ; Luy, J.F.
Author_Institution :
Res. Center, Daimler-Benz AG, Ulm, Germany
Abstract :
Easy integration of efficient SiGe HBTs and passive elements on high resistivity silicon substrate make silicon technology an attractive alternative for millimeter-wave applications. We present the realization of a 19 GHz oscillator in this technology, where the influence of device specific 1/f noise on the phase noise at the oscillating frequency was reduced. Experimental results confirm theoretical considerations.
Keywords :
1/f noise; Ge-Si alloys; MMIC oscillators; bipolar MMIC; heterojunction bipolar transistors; integrated circuit noise; phase noise; semiconductor materials; 19 GHz; HBT oscillators; SiGe; device specific 1/f noise; high resistivity substrate; millimeter-wave applications; oscillating frequency; passive elements; phase noise; Circuit noise; Frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Low-frequency noise; Noise generators; Noise reduction; Oscillators; Phase noise; Silicon germanium;
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems, 1998. Digest of Papers. 1998 Topical Meeting on
Conference_Location :
Ann Arbor, MI, USA
Print_ISBN :
0-7803-5288-2
DOI :
10.1109/SMIC.1998.750208
