Far-infrared measurements of cyclotron resonance and impurity transitions in bulk n-GaAs in pulsed magnetic fields

Author

Lewis, R.A. ; Heron, R.J. ; Clark, R.G. ; Starrett, R.P. ; Skougarevsky, A.V.

Author_Institution

Dept. of Phys., Wollongong Univ., NSW, Australia

fYear

1996

fDate

8-11 Dec 1996

Firstpage

325

Lastpage

328

Abstract

The photoconductive response of n-GaAs has been measured under laser radiation in the wavelength range 71 to 513 μm at temperatures as low as 400 mK and at magnetic fields as high as 42 T. A rich variety of spectral features are observed: cyclotron resonance, transitions associated with D^-, and transitions to stable and metastable hydrogenic states. The use of a pulsed magnet has extended the magnetic field range over which data is available by a factor of three

Keywords

III-V semiconductors; cyclotron resonance; gallium arsenide; impurity states; infrared spectra; magneto-optical effects; photoconductivity; 400 mK; 42 T; 71 to 513 micron; GaAs; bulk n-GaAs; cyclotron resonance; far-infrared spectroscopy; impurity transition; laser radiation; metastable hydrogenic state; photoconductivity; pulsed magnetic field; Cyclotrons; Impurities; Laser stability; Laser transitions; Magnetic field measurement; Magnetic resonance; Metastasis; Photoconductivity; Temperature distribution; Wavelength measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials And Devices Proceedings, 1996 Conference on

Conference_Location

Canberra, ACT

Print_ISBN

0-7803-3374-8

Type

conf

DOI

10.1109/COMMAD.1996.610136

Filename

610136