Integrated multilayer RF passives in silicon technology

Author

Burghartz, J.N.

Author_Institution

IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA

fYear

1998

fDate

18-18 Sept. 1998

Firstpage

141

Lastpage

147

Abstract

The integration of RF systems on silicon requires that, besides the high-frequency active devices, high-quality passive components be provided by the fabrication process. This requirement stresses particularly the availability of low-resistive multilayer interconnects for the integration of inductors, transformers, and MIM-capacitors. This paper shows how such components can be engineered either based on commercially available processes or by introducing new structures and materials to silicon technology.

Keywords

MMIC; UHF integrated circuits; capacitors; elemental semiconductors; high-frequency transformers; inductors; integrated circuit interconnections; passive networks; silicon; MIM-capacitors; Si; commercially available processes; fabrication process; high-quality passive components; inductors; low-resistive multilayer interconnects; multilayer RF passives; transformers; Coils; Dielectric substrates; Fabrication; Inductors; Integrated circuit interconnections; Nonhomogeneous media; Radio frequency; Silicon; Spirals; Transformers;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon Monolithic Integrated Circuits in RF Systems, 1998. Digest of Papers. 1998 Topical Meeting on

Conference_Location

Ann Arbor, MI, USA

Print_ISBN

0-7803-5288-2

Type

conf

DOI

10.1109/SMIC.1998.750209

Filename

750209