Study of piezoelectric effect in GaN thin films using a modified Michelson interferometer

Author

Muensit, S. ; Wilson, D. ; Guy, I.L.

Author_Institution

Semicond. Sci. & Technol. Labs., Macquarie Univ., NSW, Australia

fYear

1996

fDate

8-11 Dec 1996

Firstpage

329

Lastpage

332

Abstract

A single-beam interferometer has been set up to study the piezoelectric response of III-V semiconductors. Small displacements, induced by a driving voltage at a fixed frequency, can be detected and give a direct measurement of the piezoelectric coefficient. The system calibration is checked using a quartz specimen, and the measured d₁₁ value is 2.34 pm/V. Measurements on GaN films grown by chemical vapour deposition are also reported. Errors arising from non-uniform film deposition and from substrate bending are discussed

Keywords

CVD coatings; III-V semiconductors; Michelson interferometers; dielectric measurement; gallium compounds; piezoelectric semiconductors; piezoelectric thin films; semiconductor thin films; GaN; GaN thin film; III-V semiconductor; calibration; chemical vapour deposition; measurement errors; piezoelectric coefficient; single-beam Michelson interferometer; Calibration; Chemicals; Displacement measurement; Frequency measurement; Gallium nitride; III-V semiconductor materials; Piezoelectric effect; Piezoelectric films; Semiconductor thin films; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials And Devices Proceedings, 1996 Conference on

Conference_Location

Canberra, ACT

Print_ISBN

0-7803-3374-8

Type

conf

DOI

10.1109/COMMAD.1996.610137

Filename

610137